PART |
Description |
Maker |
SY88149NDLMG SY88149NDLMGTR SY88149NDL12 |
1.25Gbps Burst-Mode Limiting Amplifier
|
Micrel Semiconductor
|
SY88149HL |
3.3V 1.25Gbps Burst-Mode Limiting Amplifier with Ultra-Fast Signal Assert Timing
|
Micrel Semiconductor
|
MB82DBS04164E-70L |
64 Mbit Mobile FCRAM 1.8 V, Burst Mode & Page Mode
|
Fujitsu Component Limited. Fujitsu Media Devices Limited
|
MB82DBS02163E-70L |
32 Mbit Mobile FCRAM 1.8 V, Burst Mode & Page Mode
|
Fujitsu Limited Fujitsu Component Limited. Fujitsu Media Devices Limited
|
FTM-8012S-GG |
1.0625锝?.25Gbps GBIC Transceiver 1.0625?.25Gbps GBIC Transceiver
|
Source Photonics, Inc.
|
ZXMS6003GQ |
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFETMOSFET WITH PROGRAMMABLE CURRENT LIMIT
|
Diodes
|
GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM 12ns 100MHz 32K x 32 1Mb synchronous burst SRAM 10ns 133MHz 32K x 32 1Mb synchronous burst SRAM 9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM 11ns 117MHz 32K x 32 1Mb synchronous burst SRAM 9ns 150MHz 32K x 32 1Mb synchronous burst SRAM 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM
|
GSI Technology, Inc.
|
S71NS-N |
MirrorBit? 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory MirrorBit㈢ 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory
|
SPANSION
|
PCD5043 PCD5043H |
DECT burst mode controller
|
NXP Semiconductors
|
S29NS128J0LBJW000 S29NS064J0LBJW000 S29NS032J0LBJW |
Burst Mode Flash Memories
|
SPANSION
|
AM42BDS6408H |
Burst Mode Flash Memory
|
AMD
|
AM29BDD160GT54DKI AM29BDD160GB64CKI AM29BDD160GB65 |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 64 ns, PQFP80 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 67 ns, PQFP80 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位 M中的x 16-bit/512亩32位).5伏的CMOS只突发模式,双启动,同步写闪 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PBGA80
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|