PART |
Description |
Maker |
PBRN123E |
NPN 800 mA 40 V BISS RETs
|
NXP Semiconductors
|
PBRP113ZT PBRP113ZT215 |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB PNP 800 mA, 40 V BISS RET; R1 = 1 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
PBSS301ND |
20 V, 4 A NPN low VCesat (BISS) transistor 20伏,4安NPN型低饱和压降(BISS)晶体管
|
NXP Semiconductors N.V.
|
PBSS303NZ |
30 V, 5.5 A NPN low VCEsat (BISS) transistor 30伏,5.5安NPN型低饱和压降(BISS)晶体管
|
NXP Semiconductors N.V.
|
PBSS4580PA PBSS4580PA-15 |
80 V, 5.6 A NPN low V_CEsat (BISS) transistor 5600 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR 80 V, 5.6 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
PBSS2540M |
40 V, 0.5 A NPN low VCEsat (BISS) transistor 40 V, 0.5 A NPN low VCEsat (BISS) transistor 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
PBSS4160PAN |
NPN/NPN low VCEsat (BISS) transistor
|
NXP
|
PBSS4160PAN PBSS4160PAN-15 |
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
PBSS5130T |
30 V; 1 A PNP low VCEsat (BISS) transistor 30伏,1PNP型低饱和压降(BISS)晶体管
|
NXP Semiconductors N.V.
|
PBSS2515MB |
15 V, 0.5 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
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