PART |
Description |
Maker |
CY14B256Q1A-SXI CY14B256Q1A-SXIT CY14B256Q2A-SXI C |
256-Kbit (32 K x 8) SPI nvSRAM Infinite read, write, and RECALL cycles
|
Cypress Semiconductor
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CY14V101NA-BA25XI CY14V101NA-BA25XIT CY14V101NA-BA |
1-Mbit (128 K x 8/64 K x 16) nvSRAM Infinite read, write, and recall cycles 128K X 8 NON-VOLATILE SRAM, 25 ns, PBGA48
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http:// CYPRESS SEMICONDUCTOR CORP
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CY14B108L-BA25XI CY14B108L-BA45XI CY14B108L-BA25XI |
8-Mbit (1024 K x 8/512 K x 16) nvSRAM Infinite Read, Write, and RECALL cycles 1M X 8 NON-VOLATILE SRAM, 20 ns, PDSO44 ROHS COMPLIANT, TSOP2-44
|
Cypress Semiconductor, Corp.
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AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
MTS-18B |
15 Million cycles MTS-18B Transfer Switch DC to 18 GHz 15 Million cycles MTS-18B Transfer Switch DC to 18 GHz From old datasheet system
|
MINI[Mini-Circuits]
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MCM69R819AZP8R MCM69R819AZP5 MCM69R819AZP6 MCM69R8 |
MCM69R737A/D 4M Late Write LVTTL ER 14C 12#16 2#4 SKT PLUG 256K X 18 LATE-WRITE SRAM, 2.5 ns, PBGA119 4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3 ns, PBGA119 4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3.5 ns, PBGA119
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Motorola, Inc Motorola Mobility Holdings, Inc.
|
HS2264 HS2155 HS2153 HS2265 HS2160 HS2154 HS2261 H |
Rating(Amps)(Max.): 0.5; Rated Voltage(VAC): 125; Mating/Unmating Cycles: 200; Operating Temperature Range (degrees C): -25 to 60; Generic Name: RJ-11 Rating(Amps)(Max.): 0.5; Rated Voltage(VAC): 30; Mating/Unmating Cycles: 200; Operating Temperature Range (degrees C): -25 to 60; Generic Name: RJ-45 Rating(Amps)(Max.): 0.5; Rated Voltage(VAC): 125; Mating/Unmating Cycles: 200; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C Rating(Amps)(Max.): 0.5; Rated Voltage(VAC): 125; Mating/Unmating Cycles: 200; Operating Temperature Range (degrees C): -25 to 60; Generic Name: RJ-45 Peripheral IC 外围芯片
|
Thomas
|
PV2S640SS |
ELECTRIC LIFE: 200,000 MAKE-AND-BREAK CYCLES
|
E-SWITCH
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P13PAB223MAB17 P13PAB224MAB17 P13PAB100KAB17 P13PA |
P13L - Long Life Cermet Potentiometer up to 2 Million Cycles
|
Vishay Sfernice
|
AT49LV4096A AT49BV4096A AT49LV4096A-70C5I |
256K X 16 FLASH 2.7V PROM, 70 ns, PBGA48 4M bit, 2.7-Volt Read and 2.7-Volt Write, Byte-Write Flash, Bottom Boot 4M bit, 3.0-Volt Read and 3.0-Volt Write, Byte-Write Flash, Bottom Boot
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ATMEL CORP
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