| PART |
Description |
Maker |
| MPXAZ4115A |
Media Resistant,Integrated Silicon Pressure Sensor for Manifold Absolute Pressure,Altemeter or Barometer Applications On-Chip Signal Conditioned
From old datasheet system
MPXAZ4115A Media Resistant, Integrated Silicon Pressure Sensor for Manifold Absolute Pressure, Altimeter or Barometer Applications On-Chip Signal Conditioned, Temperature Compensated, and Calibrated
|
Motorola, Inc.
|
| MPXHZ6115A |
(MPXHZ6115A / MPXHA6115A) Media Resistant and High Temperature Accuracy Integrated Silicon Pressure Sensor
|
Motorola
|
| PULSE-VALVES-9-99 |
High-performance media resistant soleniod valves
|
Sensortechnics GmbH
|
| MPXHZ6400AC6T1 MPXHZ6400A |
Media Resistant and High Temperature Accuracy Intergrated Silicon Pressure Sensor
|
Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
|
| W83L518D05 |
Integrated Media Reader
|
Winbond
|
| W83L518D |
Integrated Media Reader
|
WINBOND[Winbond]
|
| USB2229-NU-02 |
5th Generation Hi-Speed USB Flash Media and IrDA Controller with Integrated Card Power FETs
|
Microchip Technology
|
| USB2229-NE-XX |
5th Generation Hi-Speed USB Flash Media and IrDA Controller with Integrated Card Power FETs
|
http://
|
| SIL12-1A72-74L SIL12-1A72-74LDE |
SIL Reed Relays
(deutsch) SIL Reed Relay
|
Meder Electronic
|
| USB2227-NU-11 |
4th Generation USB 2.0 Flash Media Controller with Integrated Card Power FETs
|
Microchip Technology
|
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
