PART |
Description |
Maker |
CSA968A CSA968 CSA968B CSA968BO CSA968BY CSA968AY |
25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238AO 25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238AY 25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238BY 25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238BO 25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238B 25.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238 PNP PLASTIC POWER TRANSISTORS Single-Phase Filter; Filter Type:RFI; Current Rating:16A; Voltage Rating:250V; Capacitance:1uF; Inductance:0.6uH; Mounting Type:Flange; Series:FN2060; Terminal Type:Quick Connect RoHS Compliant: Yes
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Continental Device India Limited
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CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications
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CDIL[Continental Device India Limited]
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D44H06 D45H8G D44H D44H11 D44H11G D44H8 D44H8G D45 |
Complementary Silicon Power Transistor(互补型PNP硅功率晶体管) Complementary Silicon Power Transistors
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ONSEMI[ON Semiconductor]
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MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
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2N5883 |
Complementary Silicon PNP Power Transistor(25A00W0V(集电极-发射极),补偿型PNP功率晶体 25 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
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ON Semiconductor
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2N5883G 2N5884 2N5884G 2N5885G 2N5886G 2N5883 2N58 |
Complementary Silicon High−Power Transistors 25 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA Complementary Silicon High−Power Transistors
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Rectron Semiconductor ONSEMI[ON Semiconductor]
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MJD12205 MJD122G MJD122T4 MJD122T4G MJD127G MJD127 |
Complementary Darlington Power Transistor
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ONSEMI[ON Semiconductor]
|
D45C-D |
Complementary Silicon Power Transistor
|
ON Semiconductor
|
NJVMJD128T4G |
Complementary Darlington Power Transistor
|
ON Semiconductor
|
2SA900 2SA0900 |
For low-frequency Power amplification Complementary 1 A, 18 V, PNP, Si, POWER TRANSISTOR, TO-126
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
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TIP41 TIP42BG TIP41BG TIP41AG TIP41CG TIP42AG TIP4 |
Complementary Silicon Plastic Power Transistors 6 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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Rectron Semiconductor
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