PART |
Description |
Maker |
PM20CSJ060 PM400DAS060 PM100DSA120 PM300CVA060 PM3 |
IPMS Modules: 600V MITSUBISHI INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE IPMS Modules:1200V 50Amp - intelligent power modules
|
Mitsubishi Electric Corporation
|
MID150-12A4 MII150-12A4 IXYSCORP-MID150-12A4 |
IGBT Modules Short Circuit SOA Capability Square RBSOA IGBT Modules: Boost Configurated IGBT Modules
|
IXYS Corporation
|
MII75-12A3 MDI75-12A3 MID75-12A3 |
IGBT Modules - Short Circuit SOA Capability Square RBSOA 90 A, 1200 V, N-CHANNEL IGBT IGBT Modules: Boost Configurated IGBT Modules
|
IXYS, Corp. IXYS[IXYS Corporation]
|
SKET33008D SKET33012E SKET33014E SKET33016E SKET33 |
SEMIPACK4 Thyristor Modules SEMIPACK? 4 Thyristor Modules SEMIPACK庐 4 Thyristor Modules SEMIPACK㈢ 4 Thyristor Modules
|
Semikron International
|
MID145-12A3 MII145-12A3 |
1200V IGBT module IGBT Modules: Boost Configurated IGBT Modules IGBT Modules - Short Circuit SOA Capability Square RBSOA 160 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation IXYS, Corp.
|
MCD225-12IO1 MCD225-14IO1 MCD225-16IO1 MCD225-18IO |
Thyristor and Rectifiers Modules Thyristor Modules Thyristor/Diode Modules 400 A, 1800 V, SCR Thyristor Modules Thyristor/Diode Modules 400 A, 1400 V, SCR
|
IXYS[IXYS Corporation] IXYS, Corp.
|
VBO45-12NO7 VBO45-18NO7 VBO45-08NO7 VBO45-14NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
VUO27-06NO7 VUO27-08NO7 VUO27-12NO7 |
Power Modules/Rectifier Bridge Modules: Three Phase Diode Bridges
|
IXYS
|
VUB50-16PO1 |
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS
|
PM10CNJ060 |
IPMS Modules: 600V INTELLIGENT POWER MODULES
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
HYS72D64320HU-6-C HYS64D16301HU-5-C HYS64D16301HU- |
DDR SDRAM Modules - 256MB (32Mx64) PC2700 1-bank 184-Pin Unbuffered Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|