| PART |
Description |
Maker |
| RFP-100N50TW |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| RFP-250375N4Z50-2 |
Aluminum Nitride Terminations 25 Watts, 50ohm
|
Anaren Microwave
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| AML811P5012 |
Gallium Nitride (GaN)
|
Microsemi
|
| AML056P4511 |
Gallium Nitride (GaN)
|
Microsemi
|
| NPTB00050 NPTB00050-15 |
Gallium Nitride 28V, 50W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| NPT2020 |
Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
|
| RFP-050100-2X50-2 |
Chip Terminations
|
Anaren Microwave
|
| MFE211 MFE212 |
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS N沟道双栅氮化硅钝化马鞍山场效应晶体管
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| A5BXXXX1A |
Chip Terminations 5 Watts
|
Anaren Microwave
|
|
