PART |
Description |
Maker |
MJH6287 MJH6284 ON2053 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS From old datasheet system 20 AMPERE COMPLEMENTARY SILICON
|
ONSEMI[ON Semiconductor]
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NTHD3100C NTHD3100CT1 NTHD3100CT1G NTHD3100CT3 NTH |
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™ Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 2.9 A, 20 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET Power MOSFET 20V, 3.9A/4.4A, Complementary ChipFET(20V, 3.9A/4.4A功率MOSFET) Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET
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ON Semiconductor
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HIP5015 HIP5015IS HIP5015IS1 HIP5016 HIP5016IS HIP |
7V, 7A SynchroFET?/a> Complementary Drive Synchronous Half-Bridge 7V/ 7A SynchroFET Complementary Drive Synchronous Half-Bridge 7V, 7A SynchroFET Complementary Drive Synchronous Half-Bridge From old datasheet system 7V, 7A SynchroFET⑩ Complementary Drive Synchronous Half-Bridge FPGA - 1000000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN Synchronous Half-Bridge Driver(同步半桥驱动 同步半桥驱动器(同步半桥驱动器) 7V, 7A SynchroFETComplementary Drive Synchronous Half-Bridge 7 A HB BASED PRPHL DRVR WITH PWM, PSFM7
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
2N3055MJ2955 MJ2955 2N3055 ON0038 2N3055_MJ2955 |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 120 VOLTS 115/ 180 WATTS 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS 15安培功率晶体管互补性的芯片6015 Complementary SlllconPower Translstors From old datasheet system
|
ON Semiconductor Motorola Inc MOTOROLA[Motorola, Inc]
|
SI5504DC |
Complementary 30-V (D-S) Rated MOSFET From old datasheet system Complementary 30-V (D-S) MOSFET
|
VISAY[Vishay Siliconix]
|
CHL8318-20-00CRT CHL8318-20-XXCRT CHL8318-20-15 |
Digital Multi-Phase Buck Controller Programmable 1-phase to 8-phase operation
|
International Rectifier
|
DFA150AA160 DFA150AA80 |
THREE PHASE DIODES THYRISTORS THREE PHASE DIODE THYRISTOR THREE PHASE DIODETHYRISTOR
|
SANREX[SanRex Corporation] ETC
|
110MT160K 110MT160KB 110MT160MT 90MT80KB 110MT100K |
3 PHASE, 110 A, 1400 V, SILICON, BRIDGE RECTIFIER DIODE 1200V 3 Phase Bridge in a INT-A-Pak package 1600V 3 Phase Bridge in a INT-A-Pak package 1000V 3 Phase Bridge in a INT-A-Pak package 1400V 3 Phase Bridge in a INT-A-Pak package 800V 3 Phase Bridge in a INT-A-Pak package THREE PHASE BRIDGE CAP 3300PF 100V 100V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014 三相桥式 3 PHASE, 90 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
|
IRF[International Rectifier] International Rectifier, Corp.
|
MJF31C MJF32C MJF31C-D |
Complementary Silicon Plastic Power Transistors for Isolated Package Applications 3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS
|
ONSEMI[ON Semiconductor]
|
MJL21196 MJL21195 ON2056 |
STARTER KIT, EASY 500; Output type:Relay; Temp, op. max:55(degree C); Temp, op. min:-25(degree C) RoHS Compliant: Yes COMPLEMENTARY SILICON POWER TRANSISTORS 16 AMPERE COMPLEMENTARY SILICON POWER From old datasheet system
|
ONSEMI[ON Semiconductor]
|
CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
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Continental Device India Limited
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