| PART |
Description |
Maker |
| 447AS329XM08 447FS329XM08 447LS329XM08 447SS329XM0 |
Composite EMI/RFI Environmental Band-in-a-Can Backshell with Strain-Relief Clamp
|
Glenair, Inc.
|
| 311HS063XW10 311HS063XW12 311HS063XW14 311HS063XW1 |
Composite Lamp Base Thread EMI/RFI Environmental Shield Termination Backshell
|
Glenair, Inc.
|
| 557E283M 557T283M 557S283M |
D-Subminiature Lightweight Solid EMI/RFI Banding Backshell
|
Glenair, Inc.
|
| 550E008M 550T008M |
EMI/RFI D-Subminiature Split Backshell G-Spring Shield Termination
|
Glenair, Inc.
|
| XN04212 XN4212 |
Silicon NPN epitaxial planer transistor
Composite Device - Composite Transistors
|
Panasonic Semiconductor
|
| XN06435 XN06435XN6435 XN6435 |
Composite Device - Composite Transistors
From old datasheet system
XN06435（XN6435-复合晶体
|
Panasonic
|
| XN0121M |
Composite Device - Composite Transistors 复合设备-复合晶体
Silicon NPN epitaxial planar type
|
Panasonic Industrial Solutions
Panasonic Semiconductor
|
| XN01119 XN1119 |
Composite Device - Composite Transistors
From old datasheet system
Silicon PNP epitaxial planer transistor
|
Panasonic Semiconductor
|
| XN0111H |
Composite Device - Composite Transistors
From old datasheet system
|
panasonic
|
| XP05501 |
Composite Device - Composite Transistors 复合设备-复合晶体
|
Honeywell International, Inc.
Panasonic
|
| XN0A312 XN1A312 |
Composite Device - Composite Transistors
From old datasheet system
|
Matsshita / Panasonic
|
