| PART |
Description |
Maker |
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| EIC5972-12 |
5.90-7.20 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| MGFK35V2732 |
12.7-13.2 GHz BAND 3W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| EIC1010A-12 |
10.0-10.25 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC1010A-20 |
10.00-10.25 GHz 20-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC2832-2 |
2.80-3.20 GHz 2-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1111-6 |
11.0-11.5 GHz 6-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIB1415-0.3P |
14.0-14.5 GHz 0.3-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1114-2 |
11.0-14.0 GHz 2-Watt Internally Matched Power FET
|
Excelics Semiconductor
|
| EIC8596-15 EIC8596-15NH |
8.50-9.60 GHz 15-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
http://
|
| EIC1213-12 |
12.75-13.25 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
