PART |
Description |
Maker |
BLP10H605 |
Broadband LDMOS driver transistor
|
NXP Semiconductors
|
BLP10H610-15 |
Broadband LDMOS driver transistor
|
NXP Semiconductors
|
BLF6G22-180RN BLF6G22LS-180RN |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLL6H0514L-130 BLL6H0514LS-130 |
LDMOS driver transistor BLL6H0514L-130<SOT1135A (CDFM2)|<<http://www.nxp.com/packages/SOT1135A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫 LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
LET9120 |
120W 32V HF to 2GHz LDMOS TRANSISTOR in push-pull package RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
|
ST Microelectronics STMicroelectronics
|
BLF8G24LS-100GV BLF8G24LS-100V |
Power LDMOS transistor
|
NXP Semiconductors
|
BLP05H635XR-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLA1011-2 |
Avionics LDMOS transistor
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BLF6G15LS-250PBRN |
Power LDMOS transistor
|
NXP Semiconductors
|