| PART |
Description |
Maker |
| BLF6G10-45 |
Power LDMOS transistor BLF6G10-45<SOT608A (CDFM2)|<<http://www.nxp.com/packages/SOT608A.html<1<Always Pb-free,;BLF6G10-45<SOT608A (CDFM2)|<<http://www.nxp.com/packages/SOT608A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF6G21-10G |
Power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF7G22LS-100P |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF3G21-30 |
30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
UHF power LDMOS transistor BLF3G21-30<SOT467C (SOT467C)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| MAPLST1617-030CF MAPLST1617-030CF-15 |
LDMOS RF Line Power FET Transistor
LDMOS RF Line Power FET Transistor 30 W , 1600-1700 MHz, 28V
|
M/A-COM Technology Solu...
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| BLF8G22LS-270 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF6G15LS-250PBRN |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF6G10S-45 |
Power LDMOS Transistor
|
Philips Semiconductors
|
| L8821P-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| LR301-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF6G20-230PRN10 |
Power LDMOS transistor
|
NXP Semiconductors
|
