| PART |
Description |
Maker |
| IS42S16320B-7BL IS42S16320B-7BLI IS42S16320B IS42S |
64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM
|
http://
Integrated Silicon Solution, Inc
|
| HYB39S5121600AT-8 HYB39S5121600AT-7 HYB39S5121600A |
512Mb (32M x 16) PC100 2-2-2 Available Q402
512Mb (32M x 16) PC133 2-2-2 Available Q402
512Mb (32M x 16) PC133 3-3-3 Available Q402
128M X 4 SYNCHRONOUS DRAM, 5 ns, PDSO54
|
INFINEON TECHNOLOGIES AG
|
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYS64V64220GU-75-C2 HYS72V64220GU-75-C2 HYS72V6422 |
3.3 V 64M x 64/72-Bit/ 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
SDRAM Modules - 512MB PC133 (2-2-2) 2-bank; End-of-Life
SDRAM Modules - 512MB PC133 (2-2-2) 2-bank (ECC); End-of-Life
SDRAM Modules - 512MB PC133 (3-3-3) 2-bank (ECC); End-of-Life
SDRAM|64MX64|CMOS|DIMM|168PIN|PLASTIC
SDRAM|64MX72|CMOS|DIMM|168PIN|PLASTIC
3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules 3.3400 x 64/72-Bit512MByte SDRAM内存模块168针脚无缓冲DIMM模块
64M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
|
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| KVR400X64C3A KVR400X64C3A512 |
512MB 64M x 64-Bit DDR400 CL3 184-Pin DIMM
|
Electronic Theatre Controls, Inc.
|
| EBD52UD6ADSA-E EBD52UD6ADSA-6B-E EBD52UD6ADSA-7A-E |
512MB DDR SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks)
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HYM72V64736BLT8-HP HYM72V64736BT8-HP HYM72V64736BT |
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
SDRAM - Unbuffered DIMM 512MB
|
HYNIX SEMICONDUCTOR INC
|
| EBE51ED8ABFA EBE51ED8ABFA-4A-E EBE51ED8ABFA-5C-E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
|
ELPIDA[Elpida Memory]
|
| EBE51RD8AGFA-6E-E EBE51RD8AGFA EBE51RD8AGFA-4A-E E |
512MB Registered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
|
ELPIDA[Elpida Memory]
|
| EBE51UD8AGFA-6E-E EBE51UD8AGFA EBE51UD8AGFA-4A-E E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank)
|
ELPIDA[Elpida Memory]
|
| K4S510832B-CL75 K4S510832B-UC75 K4S510432B-CL75 K4 |
512Mb B-die SDRAM Specification 512MB的乙芯片内存规格
32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
http://
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
