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BUL642D2 - High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network

BUL642D2_4605842.PDF Datasheet

 
Part No. BUL642D2 BUL642D2G
Description High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network

File Size 93.19K  /  8 Page  

Maker


ON Semiconductor



JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: BUL67
Maker: ST/0N
Pack: TO-220
Stock: Reserved
Unit price for :
    50: $0.37
  100: $0.35
1000: $0.33

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 Full text search : High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network


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