| PART |
Description |
Maker |
| BL-BUBGE301 |
Chip material: AlGaInP/GaAs
|
BRIGHT LED ELECTRONICS CORP
|
| BL-RUB139B |
CHIP MATERIAL:AIGAAS/GAAS
|
BRIGHT LED ELECTRONICS CORP
|
| BM-11K88MD-A |
super yellow chips, which are made from AlGaInP on GaAs substrate
|
BRIGHT LED ELECTRONICS CORP
|
| BL-BU23V1M |
LED AlGaInP/GaAs Super Red Low current requirement.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-BK83J7M |
LED AlGaInP/GaAs Super Yellow Low current requirement.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-BJ23J7M |
LED AlGaInP/GaAs Super Orange Low current requirement.
|
Bright LED Electronics Corp.
|
| BL-BJ73V4V-1 |
LED AlGaInP/GaAs Super Orange Low current requirement.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-BJG3V1 |
10mV Quad N-Channel Matched Pair MOSFET Array, Enhancement Mode, 14L PDIP
LED AlGaInP/GaAs Super Orange Low current requirement.
|
Bright LED Electronics Corp.
|
| BL-BKG3V4V-2 |
LED AlGaInP/GaAs Super Yellow Low current requirement.
|
BRIGHT LED ELECTRONICS ...
|
