| PART |
Description |
Maker |
| PBRN113Z PBRN113ZK PBRN113ZS PBRN113ZT |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 10 kOhm
NPN 800 mA, 40 V BISS RETs; R1 = 1 k? R2 = 10 k?
NPN 800 mA, 40 V BISS RETs; R1 = 1 k搂?, R2 = 10 k搂?
|
NXP Semiconductors
|
| PBSS4350SPN PBSS4350SPN115 PBSS4350SPN-15 |
50 V, 2.7 A NPN-PNP low VCEsat (BISS) transistor
50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor; Package: SOT96-1 (SO8); Container: Tape reel smd
|
NXP Semiconductors N.V.
|
| PBSS4112PAN |
120 V, 1 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS4112PANP |
NPN/NPN low VCEsat (BISS) transistor
|
NXP
|
| PBSS4021SN115 |
20 V, 7.5 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
|
| PBSS4160DS-15 |
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS302PZ |
20 V, 5.5 A PNP low VCEsat (BISS) transistor 20伏，5.5安PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS5130T |
30 V; 1 A PNP low VCEsat (BISS) transistor 30伏，1PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS303PX |
30 V, 5.1 A PNP low VCEsat (BISS) transistor 30伏，6安PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS4041NX |
6.2 A NPN low VCEsat (BISS) transistor
|
Philips Semiconductors
|
| PBSS2515MB |
15 V, 0.5 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS4560PA |
6A NPN Low V_CEsat (BISS) Transistor
|
NXP
|
