| PART |
Description |
Maker |
| HY5PS561621BFPC4I HY5PS561621BFPE3I HY5PS561621BFP |
256Mb DDR2 SDRAM
|
Hynix Semiconductor
|
| MT47H16M16BG-3ITB |
256Mb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
| WV3HG64M32EEU403D4IMG WV3HG64M32EEU403D4ISG WV3HG6 |
256MB - 64Mx32 DDR2 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| HYS72T64000HR-5-A HYS72T64000HR HYS72T64000HR-37-A |
DDR2 Registered Memory Modules
DDR2 SDRAM Modules - 1GB (128Mx72) PC2 4300 4-4-4 1Bank; available 2Q/04
DDR2 SDRAM Modules - 1 GB (128Mx72) PC2 4300 4-4-4 2Bank; available 2Q/04
DDR2 SDRAM Modules - 2 GB (256Mx72) PC2 4300 4-4-4 2Bank; available 3Q/04
DDR2 SDRAM Modules - 512MB (64Mx72) PC2 4300 4-4-4 1Bank; available 2Q/04
DDR2 SDRAM Modules - 1 GB (128Mx72) PC2 3200 3-3-3 1Bank; available 2Q/04
DDR2 SDRAM Modules - 1 GB (128Mx72) PC2 3200 3-3-3 2Bank; available 2Q/04
DDR2 SDRAM Modules - 2 GB (256Mx72) PC2 3200 3-3-3 2Bank; available 3Q/04
DDR2 SDRAM Modules - 512MB (64Mx72) PC2 3200 3-3-3 1Bank; available 2Q/04
|
INFINEON[Infineon Technologies AG]
|
| HYB18T512160AC-3.7 HYB18T512160AC-5 HYB18T512400AC |
DDR2 SDRAM Components - 512Mb (32Mx16) DDR2 533 (4-4-4) Available 2Q04
DDR2 SDRAM Components - 512Mb (32Mx16) DDR2 400 (3-3-3) Available 2Q04
DDR2 SDRAM Components - 512Mb (128Mx4) DDR2 533 (4-4-4) Available 2Q04
DDR2 SDRAM Components - 512Mb (128Mx4) DDR2 400 (3-3-3) Available 2Q04
DDR2 SDRAM Components - 512Mb (64Mx8) DDR2 533 (4-4-4) Available 2Q04
DDR2 SDRAM Components - 512Mb (64Mx8) DDR2 400 (3-3-3) Available 2Q04
|
Infineon
|
| K5D5657DCM-F015 K5D5657DCM-F0CL |
MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM
MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics
|
| AT91SAM9G45PRE |
DDR2 Controller 4-bank DDR2/LPDDR, SDRAM/LPSDR
|
ATMEL Corporation
|
| W3H64M72E-667ES W3H64M72E-667ESI W3H64M72E-400ESI |
64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package 64米72 DDR2 SDRAM08 PBGA封装多芯片封
|
Atmel, Corp.
Fujitsu, Ltd.
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYMP325S64MP8 HYMP112S648 HYMP112S64P8 |
DDR2 SDRAM - SO DIMM 2GB
DDR2 SDRAM - SO DIMM 1GB
|
Hynix Semiconductor
|
