PART |
Description |
Maker |
BLF6G27LS-75 BLF6G27-75 |
Product description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz WiMAX power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. BLF6G27-75<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
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NXP Semiconductors N.V.
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BLF7G27LS-75P BLF7G27L-75P |
Product description75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Power LDMOS transistor BLF7G27L-75P<SOT1121A (CDFM4)|<<http://www.nxp.com/packages/SOT1121A.html<1<Always Pb-free,;BLF7G27L-75P<SOT1121A (CDFM4)|<<http://www.nxp.com/packages/SOT1121A.html<1<Always Pb-free,;
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NXP Semiconductors N.V.
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BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
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NXP Semiconductors Quanzhou Jinmei Electro...
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BLF6G21-10G |
Power LDMOS transistor 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
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NXP Semiconductors N.V.
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MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers RF LDMOS Wideband Integrated Power Amplifiers
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Freescale (Motorola) MOTOROLA[Motorola, Inc]
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MAPLST1617-030CF MAPLST1617-030CF-15 |
LDMOS RF Line Power FET Transistor LDMOS RF Line Power FET Transistor 30 W , 1600-1700 MHz, 28V
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M/A-COM Technology Solu...
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MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230 |
MW4IC2230MBR1, MW4IC2230GMBR1 W-CDMA 2.11-2.17 GHz, 30 W, 28 V RF LDMOS Wideband Integrated Power Amplifiers RF LDMOS Wideband Integrated Power Amplifiers
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MOTOROLA[Motorola, Inc]
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TFF11145HN BLP7G10S-140 BLP7G10S-140G BLS7G3135LS- |
LDMOS S-Band radar power transistor Low phase noise LO generator TFF11126HN/N1<SOT616-1 (HVQFN24)|<<http://www.nxp.com/packages/SOT616-1.html<1<Always Pb-free,; Power LDMOS transistor BLP7G10S-140G<SOT1204 (HSOP4)|<<http://www.nxp.com/packages/SOT1204.html<1<Always Pb-free,; Power LDMOS transistor BLP7G10S-140<SOT1138 (HSOP4F)|<<http://www.nxp.com/packages/SOT1138.html<1<Always Pb-free,; SiGe:C Low Noise High Linearity Amplifier
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NXP Semiconductors N.V.
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EM73A83 |
4-Bit Microcontroller For LCD Product 4-BIT MICRO-CONTROLLER FOR LCD PRODUCT
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EMC[ELAN Microelectronics Corp]
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