PART |
Description |
Maker |
MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应 From old datasheet system 2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGFK30V4045 K304045 |
14.0~14.5GHZ BAND 1W INTERNALLY MATCHED GAAS FET From old datasheet system 14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
EIA1414-2P |
14.0-14.5GHz, 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIA1314A-4P |
13.0-14.5GHz 4W Internally Matched Power FET
|
Excelics Semiconductor
|
MGFK37V4045_97 MGFK37V4045 MGFK37V404597 |
14.0-14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFK35V4045_03 MGFK35V4045 MGFK35V404503 |
14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC47A7785 |
7.7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
MGFC40V7785A C407785A |
From old datasheet system 7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V7785B C407785B |
From old datasheet system 7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|