PART |
Description |
Maker |
19241-00 19300-00 19341-00 19301 19200-00 19202 19 |
Single Driver for GaAs FET Switches and Attenuators
|
Clare, Inc.
|
DR65-01091 |
Single Driver for GaAs FET Switches and Attenuators
|
Tyco Electronics
|
MADR-009269-0001TR |
Single Driver for GaAs FET or PIN Diode Switches and Attenuators
|
M/A-COM Technology Solu...
|
NE6500496 |
4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC
|
MGF0905A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L /S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET GaAs N-channel Dual-Gate MES FET GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation] SONY [Sony Corporation]
|
GSMBD2004 |
S U R FA C E MO U N T, SWI T C H I NG D I O D E V O LTAG E 3 0 0 V, C U R R E N T 0 . 2 2 5 A
|
E-Tech Electronics LTD
|
MGF0906 MGF0906B 0906B |
LS BAND POWER GaAs FET L /S BAND POWER GaAs FET From old datasheet system L,S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
IS9-1715ARH/PROTO 5962F0052101VXC 5962F0052101QXC |
Complementary Switch FET Driver, Rad-Hard Radiation Hardened Complementary Switch FET Driver 3 A BUF OR INV BASED MOSFET DRIVER, CDFP16
|
Intersil Corporation Intersil, Corp.
|
MGFL45V1920A |
1.9 - 2.0 GHz BAND 32W Internally Matched GaAs FET 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|