PART |
Description |
Maker |
PSTG25HTT12 |
Powerline N-Channel Trench Gate-IGBT Triple Module Powerline N-Channel Trench Gate-IGBT Module Powerline N-Channel Trench Gate- IGBT Triple Module
|
Powersem GmbH
|
PSTG75HST12 |
Powerline N-Channel Trench Gate-IGBT Module
|
Powersem GmbH
|
CY8CLED16P01-48LFXI CY8CLED16P01-48LTXI CY8CLED16P |
Powerline Communication Solution Integrated Powerline Modem PHY SPECIALTY MICROPROCESSOR CIRCUIT, PDSO28 0.210 INCH, LEAD FREE, SSOP-28
|
Cypress Semiconductor, Corp.
|
GP1600FSS12 |
Powerline N-Channel Single Switch IGBT Module Advance Information 2100 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
|
BSS138PW |
60 V, 320 mA N-channel Trench MOSFET 60 V, 360 mA N-channel Trench MOSFET
|
NXP Semiconductors
|
FDD6632_04 FDD6632 FDD663204 FDD6632NL |
30V N-Channel Logic Level UltraFET Trench Power MOSFET 4 A, 30 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 N-Channel Logic Level UltraFET? Trench Power MOSFET 30V, 9A, 70m?/a> N-Channel Logic Level UltraFET㈢ Trench Power MOSFET 30V, 9A, 70mз
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp. Microsemi Corporation
|
2N7002PV |
60 V, 350 mA N-channel Trench MOSFET 60 V, 350 mA dual N-channel Trench MOSFET
|
NXP Semiconductors
|
RP60-2412SE |
POWERLINE - DC/DC - CONVERTER
|
Recom International Pow...
|
RP10-4815SE RP10-123.3SE RP10-1212SE RP10-2412SE R |
POWERLINE - DC/DC - CONVERTER
|
RECOM[Recom International Power]
|