PART |
Description |
Maker |
RM400HV-34S |
CAP CER 22000PF 10% 50V X8R 0805 HIGH SPEED SWITCHING USE INSULATED TYPE Fast Recovery Diode Modules, F Series (for IGBT speed switching)
|
Mitsubishi Electric Sem... Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
IRG4BC40FPBF |
Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
|
International Rectifier
|
IRG4PC40FPBF IRG4PC40FPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLARTRANSISTOR Fast Speed IGBT
|
International Rectifier
|
IXGH25N100 IXGH25N100A IXGM25N100A IXGM25N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD Low V High speed IGBT
|
IXYS, Corp. IXYS[IXYS Corporation]
|
APT50GT60BR APT50GT60SRG APT50GT60BRG |
Thunderbolt IGBT Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
Microsemi Corporation http:// Microsemi, Corp.
|
IRG4PC50S-P |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
|
International Rectifier
|
IRG4BC40SPBF |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
|
IRF[International Rectifier]
|
IXGP16N60C2D1 IXGA16N60C2 |
HiPerFASTTM IGBT C2-Class High Speed IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-220AB HiPerFASTTM IGBT C2-Class High Speed IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
IXYS, Corp.
|
IRG4PH50UPBF IRG4PH50UPBF-15 |
Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
IRG4PC30UPBF |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT 绝缘栅双极晶体管IGBT的速度超快
|
International Rectifier, Corp.
|
MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor Mitsubishi Electric Semiconductor Toshiba Corporation
|
GT15M321 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
TOSHIBA[Toshiba Semiconductor]
|