PART |
Description |
Maker |
LH28F160S3HT-L10A LHF16KA7 |
Flash Memory 16M (2MB x 8/1MB x 16) Flash Memory 16M (2MB bb 8/1MB bb 16)
|
SHARP
|
LH28F160S3NS-L10 LHF16KA1 |
Flash Memory 16M (2MB 】 8/1MB 】 16) Flash Memory 16M (2MB 8/1MB 16)
|
SHARP[Sharp Electrionic Components]
|
M29W160DB M29W160DT |
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block 3V Supply Flash Memory
|
ST Microelectronics
|
M29W160ET M29W160EB70N6 M29W160EB90N6E M29W160EB70 |
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
|
Numonyx B.V
|
IS61VPS204818A |
1MB x 36/ 2Mb x 18 36Mb SYNCHRONOUS PIPELINED / SINGLE CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution
|
M29W160 M29W160BB M29W160BB120M1T M29W160BB120M6T |
16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
27C160 M27C160 M27C160-100B1 M27C160-100B1TR M27C1 |
16 Mbit 2Mb x8 or 1Mb x16 UV EPROM and OTP EPROM 16兆位Mb x8兆x16紫外线存储器和OTP存储 IC BUFF/DRVR 16BIT 3ST 48-TSSOP 16兆位Mb x81兆x16紫外线存储器和OTP存储 16-Bit Transparent D-Type Flip-Flop 16兆位Mb x8兆x16紫外线存储器和OTP存储 IC ADRSS DRVR REG 1-4BIT 56TSSOP 16兆位Mb x8兆x16紫外线存储器和OTP存储 16-Bit Bi-directional Bus Transceiver
|
STMicroelectronics N.V. 意法半导 ST Microelectronics
|
GS72116TP-10 GS72116TP-15 GS72116TP GS72116J-15 GS |
15ns 128K x 16 2Mb asynchronous SRAM 8ns 128K x 16 2Mb asynchronous SRAM 10ns 128K x 16 2Mb asynchronous SRAM 12ns 128K x 16 2Mb asynchronous SRAM
|
GSI[GSI Technology]
|
M48Z2M1Y M48Z2M1Y-70PL1 M48Z2M1Y-70PL9 M48Z2M1YPL |
16 Mb (2Mb x 8) ZEROPOWER SRAM 122 x 32 pixel format, Compact LCD size 16 Mb 2Mb x 8 ZEROPOWER SRAM
|
SGS Thomson Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
IS61NVP6436A-200TQI IS61NVP12818A-250TQ IS61NVP128 |
64K x 32, 64K x 36, and 128K x 18 2Mb, PIPELINE (NO WAIT) STATE BUS SRAM 128K X 18 ZBT SRAM, 3.1 ns, PQFP100 64K x 32, 64K x 36, and 128K x 18 2Mb, PIPELINE (NO WAIT) STATE BUS SRAM 128K X 18 ZBT SRAM, 2.6 ns, PQFP100
|
Integrated Silicon Solution, Inc. Integrated Silicon Solution...
|
MT58L64L18F MT58L32L32F MT58L32L36F |
32K x 323.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 32K x 363.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 64K的18.3V的I / O的流量通过SyncBurst的SRAM兆,3.3V的输输出,流通式同步脉冲静态内存)
|
Micron Technology, Inc.
|