| PART |
Description |
Maker |
| DR65-0001 DR65-0001TR |
Quad driver for GaAs switches and attenuator
Quad Driver for GaAs FET Switches and Attenuators 四驱动砷化镓场效应管开关和衰减
|
MA-Com
Tyco Electronics
飞思卡尔半导体(中国)有限公司
|
| MADR-009190-000100V4 |
Quad Driver for GaAs FET or PIN Diode
|
M/A-COM Technology Solutions, Inc.
|
| DR65-00011 DR65-001TR |
Quad Driver for GaAs FET Switches and Attenuators
|
Tyco Electronics
|
| MADRCC0004 MADRCC0004TR |
Quad Driver for GaAs FET Switches and Attenuators
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| MADR-009190-000100 |
Quad Driver for GaAs FET or PIN Diode Switches and Attenuators
|
M/A-COM Technology Solu...
|
| RJK4512DPE-00-J3 RJK4512DPE |
Silicon N Channel MOS FET High Speed Power Switc
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| DR65-01091 |
Single Driver for GaAs FET Switches and Attenuators
|
Tyco Electronics
|
| MGF0904A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| MGF0907 MGF0907B |
L /S BAND POWER GaAs FET
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| MGF0906 MGF0906B 0906B |
LS BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
L,S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MADR-009269-000100 |
Single Driver for GaAs FET or PIN Diode Switches and Attenuators
|
M/A-COM Technology Solu...
|
