| PART |
Description |
Maker |
| W3DG6435V7D2 W3DG6335V10D2 W3DG6335V75D2 W3DG6335V |
256MB - 32Mx64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3DG6433V75D1 W3DG6433V10D1 W3DG6433V-D1 |
256MB - 32Mx64 SDRAM, UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| WED3DG6435V75AD1 WED3DG6435V7AD1 WED3DG6435V10AD1 |
256MB - 32Mx64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| NT256S64V8HC0G-8B NT256S64V8HC0G NT256S64V8HC0G-75 |
32Mx64 bit Two Bank Unbuffered SDRAM Module
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| M368L3223CTL |
32Mx64 DDR SDRAM 184pin DIMM based on 32Mx8 Data Sheet
|
Samsung Electronic
|
| M366S3253BTS-C75 |
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M366S3323CT0-C75 M366S3323CT0 |
32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
|
SAMSUNG[Samsung semiconductor]
|
| M368L3313CT1 |
32Mx64 DDR SDRAM 184pin DIMM based on 16Mx8 Serial Presence Detect
|
Samsung Electronic
|
| VBUS053CZ-HAF VBUS053CZ-HAF-G-08 |
USB-OTG BUS-Port ESD-Protection for VBUS = 28 V
|
Vishay Siliconix
|
| M368L3313DTL-CA2 M368L3313DTL-CB3 M368L3313DTL-CB0 |
256MB DDR SDRAM MODULE (32Mx64(16Mx64*2 bank) based on 16Mx8 DDR SDRAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| TP0101K TP0101K-T1-E3 TP0101T |
TP0101K vs. TP0101T Specification Comparison
TP0101K vs. TP0101T Specification Comparison
P-Channel 20-V (D-S) MOSFET, Low-Threshold P通道20 - V（下局副局长）MOSFET的低阈
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
|
