PART |
Description |
Maker |
PM20CSJ060 PM400DAS060 PM100DSA120 PM300CVA060 PM3 |
IPMS Modules: 600V MITSUBISHI INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE IPMS Modules:1200V 50Amp - intelligent power modules
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Mitsubishi Electric Corporation
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MCC162-18IO1 MCC162-14IO1 MCD162-18IO1 MCD162-12IO |
Thyristor and Rectifiers Modules PC Board Connector; No. of Contacts:8; Pitch Spacing:3.96mm; No. of Rows:1; Mounting Type:PCB Thru-hole; Body Material:PA Polyamide (Nylon); Contact Thyristor Modules Thyristor/Diode Modules 300 A, 1400 V, SCR Thyristor Modules Thyristor/Diode Modules 晶闸管模块可控硅/二极管模 Thyristor Modules Thyristor/Diode Modules 300 A, 800 V, SCR Thyristor Modules Thyristor/Diode Modules 300 A, 1800 V, SCR
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IXYS[IXYS Corporation] IXYS, Corp.
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SPM4M024-100 SPC8M075-006 SPC8M045-010 SPC8M030-02 |
6 A, 1000 V, 2 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 130 A, 60 V, 0.006 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 120 A, 300 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 40 A, 600 V, 0.18 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 350 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 30 A, 200 V, 0.075 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 45 A, 100 V, 0.03 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 30 A, 200 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Standard Industrial Grade MOSFET Power Modules 300 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
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Sensitron Semiconductor http://
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PM20CNJ060 |
IPMS Modules: 600V INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
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Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
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TM25RZ-24 TM25RZ-2H TM25EZ-24 TM25EZ-2H TM25RZ/EZ- |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
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Mitsubishi Electric Corporation
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RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
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Mitsubishi Electric Corporation
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QM100HA-H QM100HY-H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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MDD310-22N1 MDD310 MDD310-08N1 MDD310-12N1 MDD310- |
High Power Diode Modules 305 A, 1600 V, SILICON, RECTIFIER DIODE TV 100C 100#22D SKT RECP Thyristor and Rectifiers Modules
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IXYS, Corp. IXYS[IXYS Corporation]
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MCC44 MCC44-08IO1B MCC44-08IO8B MCC44-12IO1B MCC44 |
Thyristor Modules Thyristor/Diode Modules 80 A, 1800 V, SCR, TO-240AA Thyristor Modules Thyristor/Diode Modules 80 A, 1600 V, SCR, TO-240AA Thyristor Modules Thyristor/Diode Modules 80 A, 1200 V, SCR, TO-240AA Thyristor Modules Thyristor/Diode Modules 80 A, 800 V, SCR, TO-240AA Thyristor Modules Thyristor/Diode Modules 80 A, 1400 V, SCR, TO-240AA Thyristor and Rectifiers Modules
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IXYS, Corp. IXYS Corporation
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IRKE9104 IRKE9105 C9104 |
New ADD-A-pak Power Modules(ADD-A-pak 功率模块(单个二极) New ADD-A-pak Power Modules(??ADD-A-pak ???妯″?(??釜浜??绠?) New ADD-A-pak Power Modules(??ADD-A-pak ???妯″?(涓や釜浜??绠??遍???)
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International Rectifier
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