| PART |
Description |
Maker |
| BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s
High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc.
STMicroelectronics
|
| 2SC4709 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
High-Voltage Amplifier/ High-Voltage Switching Applications
|
Sanyo Semicon Device
Toshiba Semiconductor
|
| 2SA18621 2SA2072 2SA1862 |
High-voltage Switching Transistor (?400V, ?2A)
High-voltage Switching Transistor (−400V, −2A)
High voltage discharge, High speed switching, Low Noise (?60V, ?3A)
|
ROHM[Rohm]
|
| 2SC4636LS |
NPN Triple Diffused Planar Silicon Transistor 1800V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications
1800V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| KTC4520F |
TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR, HIGH VOLTAGE, HIGH VOLTAGE SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| 2SK3748 |
N CHANNEL MOS SILICON TRANSISTOR
High-Voltage High-Speed Switching Applications
High-Voltage, High-Speed Switching Applications
From old datasheet system
|
SANYO[Sanyo Semicon Device]
|
| CMPD2004S CMPD2003 CMPD2003C CMPD2003S CMPD2004 CM |
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE
SMD Switching Diode Dual: High Voltage: Common Anode
|
CENTRAL[Central Semiconductor Corp]
|
| BAW79B BAW78A-BAW79D BAW79D BAW79C BAW79A Q62702-A |
Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode)
From old datasheet system
|
SIEMENS A G
Siemens Group
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SC3306 |
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATION)
|
Toshiba Semiconductor
|
| 2SK2602 |
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ SWITCHING REGULATOR APPLICATIONS)
|
Toshiba Semiconductor
|
