| PART |
Description |
Maker |
| HMC512LP5 HMC512LP5E |
MMIC VCO w/ BUFFER AMPLIFIER, 7.1 - 7.9 GHz
MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.6 - 10.8 GHz
|
Hittite Microwave Corporation
|
| SSW208 |
DC-4 GHz, High Isolation GaAs MMIC SPDT Switch DC - 4型频率，高隔离的GaAs MMIC SPDT开
|
Stanford Microdevices
|
| HMC534LP5 HMC534LP5E |
Heterojunction Bipolar Transistor (HBT) MMIC VCOs.
MMIC VCO W/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 10.6 - 11.8 GHZ
|
Hittite Microwave Corporation
|
| XD1004-BD-EV1 XD1004-BD-000V |
10.0-40.0 GHz GaAs MMIC Distributed Amplifier 10000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
10.0-40.0 GHz GaAs MMIC Distributed Amplifier 10.0-40.0千兆赫的GaAs MMIC分布式放大器
|
Mimix Broadband, Inc.
|
| RFVC1800 RFVC1800PCK-410 RFVC1800S2 |
WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 8 GHz to 12 GHz
|
http://
RF Micro Devices
|
| BGA318 Q62702-G0043 |
From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器（级0瓦，增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫）
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| AM028S1-00 |
LJT 37C 37#22D PIN WALL RECP 26-33 GHz的砷化镓微波单片集成电路单平衡下变频混频
26-33 GHz GaAs MMIC Single Balanced Down Converter Mixer
26?3 GHz GaAs MMIC Single Balanced Down Converter Mixer
|
Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
|
| AA038P5-00 |
379 GHz GaAs MMIC Power Amplifier
37-39 GHz GaAs MMIC Power Amplifier
GT 4C 4#4 SKT PLUG
|
Alpha Industries Inc
ALPHA[Alpha Industries]
Alpha Industries, Inc.
|
| HMC547LP3 -HMC547LP3 |
GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20.0 GHz 砷化镓单片单刀双掷非反射开关，直流- 20.0千兆
GaAs MMIC SPDT NON-REFLECTIVE SWITCH / DC - 20.0 GHz
From old datasheet system
|
HITTITE[Hittite Microwave Corporation]
|
