PART |
Description |
Maker |
2SD1055 2SD1766 D1758 2SD1758 2SD1919 2SD1862 A580 |
Medium Power Transistor (32V, 2A) 2000 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR Medium Power Transistor 32V/ 2A Medium Power Transistor 32V, 2A Medium Power Transistor 32V 2A From old datasheet system
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ROHM[Rohm] Rohm CO.,LTD.
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2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132 |
Medium Power Transistor 中等功率晶体 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62 From old datasheet system Medium Power Transistor (-32A,-1A) Transistors > Small Signal Bipolar Transistors(up to 0.6W) Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
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Rohm Co., Ltd. Rohm CO.,LTD. ROHM[Rohm]
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2SC2411K 2SC1741S 2SC4097 |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) Medium Power Transistor (32V, 0.5A) Medium Power Transistor (32V 0.5A) Medium Power Transistor (32V/ 0.5A)
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ROHM[Rohm]
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CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. 30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. 30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. PNP Silicon Epitaxial Power Transistor
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CDIL[Continental Device India Limited]
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BCP69-16 BCP69-25 BCP69 BCP69/T1 |
TRANSISTOR MEDIUM POWER PNP medium power transistor
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PHILIPS[Philips Semiconductors]
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BCP69 BCP69-16 BCP69-16_DG BCP69-16_IN BCP69-25 BC |
PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd 20 V, 1 A PNP medium power transistor
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NXP Semiconductors
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DXT2010P5 DXT2010P5-13 DXT2010P5-15 |
60V NPN MEDIUM POWER TRANSISTOR PowerDI垄莽5 60V NPN MEDIUM POWER TRANSISTOR PowerDI?5
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Diodes Incorporated
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CSB546O CSB546R CSB546Y |
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 70 - 140 hFE. Complementary CSD401O 25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 80 hFE. Complementary CSD401R 25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 120 - 240 hFE. Complementary CSD401Y 25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 240 hFE. Complementary CSD401
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Continental Device India Limited
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2N2369ADCSM |
High Speed Medium Power NPN Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型NPN晶体管(高可靠性、陶瓷表贴封装)) DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
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TT electronics Semelab Limited SEME-LAB[Seme LAB]
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MC79L0006 MMBT5551-A-AE3-E-R MMBT5551-X-AE3-6-R MM |
PNP EXPITAXIAL PLANAR TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR
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友顺科技股份有限公司 UTC[Unisonic Technologies]
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2SB1189 2SB1238 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) Medium power transistor
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Rohm
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