PART |
Description |
Maker |
BLF573S |
HF / VHF power LDMOS transistor
|
NXP Semiconductors
|
BLF574 |
HF - VHF power LDMOS transistor BLF574<SOT539A (LDMOST)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
MS1337 |
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 30; P(in) (W): 3; Gain (dB): 10; Vcc (V): 12.5; Cob (pF): 120; fO (MHz): 0; Case Style: M113 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
|
BLF6G27S-4508 BLF6G27S-45 BLF6G27-45 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. WiMAX power LDMOS transistor
|
NXP Semiconductors N.V.
|
MHPA18010 |
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier CDMA BAND RF LINEAR LDMOS AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola) MOTOROLA[Motorola, Inc]
|
BLF3G21-30 |
30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. UHF power LDMOS transistor BLF3G21-30<SOT467C (SOT467C)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
QPX112 |
2 Watt Multi-channel VHF Transceiver
|
Radiometrix Ltd
|
TR1M-151-5 |
Narrow Band FM Multi-channel VHF Transceiver
|
Radiometrix Ltd
|
LMR1-173-5-12K5 LMT1-173-5-12K5 LMR1-151-5-12K5 LM |
VHF Narrow Band FM Low Cost multi channel radio modules
|
Radiometrix Ltd
|
40TR12B |
SENSOR / ULTRASONIC / 40KHZ / TRAN
|
Jameco
|
MAPLST1617-030CF MAPLST1617-030CF-15 |
LDMOS RF Line Power FET Transistor LDMOS RF Line Power FET Transistor 30 W , 1600-1700 MHz, 28V
|
M/A-COM Technology Solu...
|