| PART |
Description |
Maker |
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYB25D128160AT-6 HYB25D128400AT-7 HYB25D128800AT-7 |
DDR SDRAM Components - 128Mb (8Mx16) DDR333 (2.5-3-3)
DDR SDRAM Components - 128Mb (32Mx4) DDR266A (2-3-3)
DDR SDRAM Components - 128Mb (16mx8) DDR266A (2-3-3)
128 Mbit Double Data Rate SDRAM
|
Infineon
|
| ESMMC128 ESMMC512 ESMMC256 ESMMC64 |
64MB/128MB/256MB/512MB MultiMediaCard⑩
64MB/128MB/256MB/512MB MultiMediaCard?/a>
64MB/128MB/256MB/512MB MultiMediaCard垄芒
|
Eorex Corporation
|
| HYB25D128800AT-8 HYB25D128400AT-8 |
128Mb (32Mx4) DDR200 (2-2-2)
128Mb (16Mx8) DDR200 (2-2-2) 28Mb的（16Mx8）DDR200-2-2）？
?128Mb (16Mx8) DDR200 (2-2-2)?
|
Infineon Technologies AG
|
| K4H561638A-TCA0 K4H561638A-TCA2 K4H561638A-TCB0 K4 |
128Mb F-die DDR SDRAM Specification
256Mb DDR SDRAM
DDR SDRAM Specification Version 1.0
128MB DDR SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| W941232AD |
128Mb DDR
|
Winbond
|
| EM42AM1644RTA-5FE EM42AM1644RTA-6FE EM42AM1644RTA- |
Double DATA RATE SDRAM
128Mb (2M】4Bank】16) Double DATA RATE SDRAM
128Mb (2M隆驴4Bank隆驴16) Double DATA RATE SDRAM
128Mb (2M?4Bank?16) Double DATA RATE SDRAM
128Mb (2M×4Bank×16) Double DATA RATE SDRAM
|
Eorex Corporation
|
| HYM71V16M635HCLT8-H |
SDRAM - SO DIMM 128MB
|
Hynix Semiconductor
|
| HY5DU28422DT-X HYNIXSEMICONDUCTORINC.-HY5DU28822DT |
128Mb-S DDR SDRAM
|
Hynix Semiconductor Inc.
|
| HY5DU28822ETP-H HY5DU28822ETP-J HY5DU28822ETP-M HY |
DDR SDRAM - 128Mb
|
Hynix Semiconductor
|
| W987D6HB13 W987D2HBJX6I W987D2HBJX7G W987D2HBJX7I |
128Mb Mobile LPSDR
|
Winbond
|
