| PART |
Description |
Maker |
| CY8C21123 CY8C2112311 CY8C21123-24SXIT CY8C21323-2 |
PSoC Programmable System-on-Chip Low power at high speed
PSoC(R) Programmable System-on-Chip(TM); Analog PSoC Blocks: 4; Digital PSoC Blocks: 4; Memory Size: 4 KB; Temperature Range: -40 to 85 C MULTIFUNCTION PERIPHERAL, PDSO8
PSoC™ Mixed-Signal Array CY8C21123, CY8C21223, and CY8C21323 MULTIFUNCTION PERIPHERAL, QCC24
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY8C41223 |
(CY8C41123 / CY8C41223) Linear Power Devices
|
Cypress Semiconductor
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| CY8C24894 CY8C24094 CY8C2409411 CY8C24994 |
PSoC Programmable System-on-Chip Low power at high speed
|
Cypress Semiconductor
|
| CY8C24894-24LFXA |
Automotive PSoC Programmable System-on-Chip Low power at high speed
|
Cypress Semiconductor
|
| CY8C27443E CY8C27243E |
PSoC Mixed-Signal Controllers : PSoC Mixed-Signal Array
|
Cypress
|
| STM901-30 |
RF POWER MODULE LINEAR BASE STATION APPLICATIONS . LINEAR POWER AMPLIFIER
|
ST Microelectronics
|
| VJ15PA0340 VJ32PA0340 VJ15MA0160 VJ15MA0340 VJ13MA |
Transient Voltage Suppression, ESD Protection Devices & EMI Devices
|
AVX Corporation
|
| BAS21 BAS21-MR |
PSoC® Mixed-Signal Array CY8C27143, CY8C27243, CY8C27443, CY8C27543, and CY8C27643
General Purpose High Voltage Diode
PSoC® Mixed-Signal Array CY8C27143, CY8C27243, CY8C27443, CY8C27543, and CY8C27643
|
Fairchild Semiconductor
|
| RF6100-4PCBA RF6100-4 |
3 V 1900 MHz Linear Power Amplifier Module
3V 1900MHZ LINEAR POWER AMPLIFIER
|
RFMD[RF Micro Devices]
RF Micro Devices, Inc.
|
| EPC4 EPC8 |
Configuration Devices for SRAM-Based LUT Devices
|
Altera Corporation
|
| NANOSMDM050F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
|
