| PART |
Description |
Maker |
| Q62702-B257 BBY34D Q62702-B194 BBY34C |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管（Hyperabrupt交界调谐二极管频率线性调谐范 12五）
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SMV1130-079 |
Hyperabrupt Junction Tuning Varactor
|
Skyworks Solutions
|
| SMV1269-074 SMV1269-074LF |
Hyperabrupt Junction Tuning Varactor
|
Skyworks Solutions Inc.
|
| SMV2023-001 SMV2023-004 SMV2022-004 SMV2022-001 |
Hyperabrupt Junction Tuning Varactor
|
Alpha Industries Inc
|
| SMV1142 SMV1142-011 SMV1142-011LF SMV1143 SMV1143- |
Hyperabrupt Junction Tuning Varactors
|
Skyworks Solutions Inc.
|
| SMV1265-011LF |
Hyperabrupt Junction Tuning Varactors
|
Skyworks Solutions Inc.
|
| SMV2020-079LF |
SMV2019-SMV2023 Series: Hyperabrupt Junction Tuning Varactors
|
Skyworks Solutions Inc.
|
| BBY53-03W Q62702-B0825 BBY5303W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BBY51-07 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation
|
SIEMENS[Siemens Semiconductor Group]
|
| BBY53-02L BBY53-02V BBY53-03L BBY53-05W BBY53 BBY5 |
Varactordiodes - Silicon high Q hyperabrupt dual tuning diode
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package
Silicon Tuning Diode 硅调谐二极管
|
http://
INFINEON[Infineon Technologies AG]
|
| AHV2000 AHV2004 AHV2011 AHV2002 AHV2003 AHV20 |
SILICON HYPERABRUPT TUNING VARACTOR UHF BAND, 6.05 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
