| PART |
Description |
Maker |
| CY7C1297A1-50AC CY7C1297A-50AC CY7C1297A-66AC GVT7 |
Memory : Sync SRAMs
64K X 18 Synchronous Burst SRAM
|
Cypress Semiconductor
|
| CY7C1443AV25 |
Memory : Sync SRAMs
|
Cypress
|
| CY7C1381C-117AI CY7C1383C-100BZI CY7C1383C CY7C138 |
Memory : Sync SRAMs
18-Mb (512K x 36/1M x 18) Flow-Through SRAM
|
CYPRESS[Cypress Semiconductor]
|
| CY7C4282V03 CY7C4282V-10ASC CY7C4282V-15ASC CY7C42 |
Memory : FIFOs
64K/128K x 9 Low-Voltage Deep Sync FIFOs with Retransmit and Depth Expansion
|
Cypress Semiconductor
|
| GS84032AB-180 GS84018AB-180 GS84036AB-180 GS84036A |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256 × 1828K的3228K的36 4Mb的同步突发静态存储器
256K x 18/ 128K x 32/ 128K x 36 4Mb Sync Burst SRAMs
Time-Delay Relay; Contacts:SPST-NC; Time Range:0.1 - 60 sec.; Mounting Type:Panel; Timing Function:Delay-On-Break; Supply Voltage:12VDC; Time Range Max:60s; Time Range Min:0.1s
|
ETC
Electronic Theatre Controls, Inc.
|
| GS88236BD-333I GS88218 GS88218BB-150 GS88218BB-150 |
9Mb Burst SRAMs
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS88218AB-150I GS88218AD-250 GS88218AB-250 GS88218 |
9Mb Burst SRAMs
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| CY7C1297H-133AXC |
1-Mbit (64K x 18) Flow-Through Sync SRAM; Architecture: Standard Sync, Flow-through; Density: 1 Mb; Organization: 64Kb x 18; Vcc (V): 3.1 to 3.6 V
|
CYPRESS SEMICONDUCTOR CORP
|
| GS8320E18T-150I GS8320E18T-166I GS8320E18T-200 GS8 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS832118E-150IV GS832118E-133IV GS832118E-133V GS8 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS832118GE-166 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI Technology
|
