PART |
Description |
Maker |
MTM8N60 MTH8N60 MTH8N55 |
(MTH8N55 / MTH8N60) Power Field Effect Transistor Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC MOTOROLA[Motorola, Inc] Motorola Semiconductor Motorola, Inc.
|
PTF10009 |
85 Watts, 1.0 GHz GOLDMOS?/a> Field Effect Transistor 85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor 85 Watts, 1.0 GHz GOLDMOSField Effect Transistor 85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
2SK3078A |
Field Effect Transistor Silicon N Channel MOS Type VHF/UHF Band Amplifier Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
2SK231202 2SK231207 2SK2312 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER Regulator, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−?MOSV) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−ば-MOSV)
|
Toshiba Semiconductor
|
2SJ620 |
Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-ヰ-MOSV) TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV)
|
TOSHIBA[Toshiba Semiconductor]
|
2SK3388 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator, DC-DC Converter Applications Motor Drive Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
2SK3387 |
Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Switching Regulator, DC-DC Converter and Motor Drive Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) 东芝场效应晶体管频道马鞍山型(二π- MOSV From old datasheet system
|
PMC-Sierra, Inc. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦,1.0 GHz的GOLDMOS场效应晶体管 35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor 35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|
TPC8104-H |
Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII) TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
|
Toshiba Corporation Toshiba Semiconductor
|
SSM3K12T |
Field Effect Transistor Silicon N Channel MOS Type/Category DC-DC Converter High Speed Switching Applications CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category
|
TOSHIBA[Toshiba Semiconductor]
|
2SJ567 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV) Field Effect Transistor Silicon P Channel MOS Type (pi-MOSV) Switching Applications Chopper Regulator, DC-DC Converter and Motor Drive Applications
|
Toshiba Semiconductor
|