| PART |
Description |
Maker |
| CZT7090L |
SMD Bipolar Power Transistor PNP Low VCE(SAT)
SURFACE MOUNT LOW VCE(SAT) PNP SILICON POWER TRANSISTO
|
CENTRAL[Central Semiconductor Corp]
|
| 2SA1900 A5800745 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
Medium Power Transistor (-50V, -1A)
|
ROHM
|
| TDA7910 TDB7910 |
MEDIUM POWER SINGLE BIPOLAR OPERATIONAL AMPLIFIER
|
STMICROELECTRONICS[STMicroelectronics]
|
| AT-42085 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip(高达6 GHz中等功率硅双极型晶体
|
Agilent(Hewlett-Packard)
|
| 2SC4015 2SC3415S 2SC4061K |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
|
ROHM
|
| AT-42010 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip(高达6 GHz中等功率硅双极型晶体 GHz中等功率硅双极晶体管芯片（高 GHz的中等功率硅双极型晶体管
|
Agilent(Hewlett-Packard)
HIROSE ELECTRIC Co., Ltd.
|
| SST2222A UMT2222A MMST2222A PN2222A |
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
NPN Medium Power Transistor (Switching)
|
ROHM[Rohm]
|
| AOD421 |
P-Channel Enhancement Mode Field Effect Transisto
|
Alpha & Omega Semiconductors
|
| CC5401 |
PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTO
|
Continental Device India Limited
|
| RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| 2SA2071 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
ROHM
|
