| PART |
Description |
Maker |
| CY7C1379B-117AC CY7C1379B-117BZC CY7C1379B |
9-Mbit (256K x 32) Flow-through SRAM with NoBL(TM) Architecture
9-Mbit (256K x 32) Flow-through SRAM with NoBL⑩ Architecture
9-Mbit (256K x 32) Flow-through SRAM with NoBL垄芒 Architecture
9-Mbit (256K x 32) Flow-through SRAM with NoBL Architecture
|
Cypress Semiconductor
|
| CY7C1355C-100AXC CY7C1355C-100BGXC CY7C1355C-133AX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 7.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA119
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL??Architecture
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1363C-100AJXC CY7C1363C-100AJXI CY7C1363C-100A |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
|
Cypress Semiconductor
|
| CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的（256 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J- |
18-Mbit QDR™-II SRAM 4-Word Burst Architecture
18-Mbit DDR-II SRAM 2-Word Burst Architecture
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM
SPI Serial EEPROM SPI串行EEPROM
|
Analog Devices, Inc.
|
| E28F002BX-B80 E28F002BX-T60 E28F002BX-T80 E28F002B |
5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200BX - B 2兆位28K的1656K × 8）启动块闪存系列
ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes
28F002BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
|
http://
Intel, Corp.
PROM
Intel Corp.
Intel Corporation
|
| CY7C1231H-133AXI CY7C1231H-133AXC |
2-Mbit (128K x 18) Flow-Through SRAM with NoBLArchitecture
2-Mbit (128K x 18) Flow-Through SRAM with NoBL??Architecture
|
Cypress Semiconductor Corp.
|
| IDT71V2577YS75BQI IDT71V2577YS75BGI IDT71V2579S85B |
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K的x 36256亩18 3.3同步SRAM.5VI / O的流量通过输出脉冲计数器，单周期取
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8.5 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PBGA119
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 7.5 ns, PBGA119
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| A28F400BR-TB A28F400BR-B AB28F400BR-T80 AB28F400BR |
4-MBIT (256K X 16/ 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
Toggle Switch; Circuitry:DPDT; Switch Operation:On-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Through Hole; Current Rating:3A; Leaded Process Compatible:Yes; Mounting Type:PCB; Features:Standard Actuator RoHS Compliant: Yes
4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-Mbit (256K x 16, 512K x 8) SmartVoltage boot block flash memory. Access speed 80 ns
|
Intel Corporation
Intel Corp.
|
| CY7C1297H-133AXC |
1-Mbit (64K x 18) Flow-Through Sync SRAM; Architecture: Standard Sync, Flow-through; Density: 1 Mb; Organization: 64Kb x 18; Vcc (V): 3.1 to 3.6 V
|
CYPRESS SEMICONDUCTOR CORP
|
| AS5SS256K36ADQ-8.5/883C |
256K x 36 SSRAM Flow-Through, Synchronous Burst SRAM 256K X 36 STANDARD SRAM, 8.5 ns, PQFP100
|
Austin Semiconductor, Inc
|
