| PART |
Description |
Maker |
| UNA0217 |
Transistor array to drive the small motor
|
PANASONIC CORP
|
| UNA0216 |
Transistor array to drive the small motor
|
Panasonic Semiconductor
|
| UN230 |
Transistor array to drive the small motor
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| 2SD2248 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Hammer Drive, Pulse Motor Drive Applications For Inductive Load Drive
|
TOSHIBA
|
| KTD1145 |
EPITAXIAL PLANAR NPN TRANSISTOR (RELAY DRIVE/ HAMMER DIRVE/ LAMP DRIVE/ STROBO/DC-DC CONVERTER/ MOTOR DRIVE)
Strobo Flash Transistor
|
KEC(Korea Electronics)
Korea Electronics (KEC)
|
| BCR48PN Q62702-C2496 BCR48 Q62702-C2411 BCR48PNQ62 |
FUSE BLOCK 3AG 1POS 1/4 QC
1000PF 100V 10% MONOLIT CERM CAP
NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)
From old datasheet system
NPN/PNP Silicon Digital Tansistor Array (Switching circuit inverter interface circuit drive circuit)
NPN/PNP Silicon Digital Tansistor Array (Switching circuit/ inverter/ interface circuit/ drive circuit)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| OM6407SD OM6406SD OM6408SD OM6405SD |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | FP
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | FP
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 400V五（巴西）直| 5.5AI（四）|计划生育
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 100V的五（巴西）直| 8A条（丁）|计划生育
|
Mitsubishi Electric, Corp.
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| M54583 M54583P M54583PNBSP |
From old datasheet system
M54583P Darlington Transistor Array
8 UNIT 400MA DARLINGTON TRANSISTOR ARRAY
|
Mitsubishi Electric Corporation
Mitsubishi Electronics America Inc
Mitsubishi Electric Semiconductor
|
| MP4514 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA[Toshiba Semiconductor]
|
| MP4020 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
| 2SD1631 |
Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
|
TOSHIBA
|
