| PART |
Description |
Maker |
| MRF18085B |
MRF18085B, MRF18085BR3, MRF18085BLSR3 GSM/GSM EDGE 1.9-1.99 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF5S9101NBR1 MRF5S9101NR1 |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
|
Freescale Semiconductor
|
| AWS5522 AWS5522S26 AWS5522D1 |
0.5 to 2.5 GHz SPDT Switch 0.5.5 GHz SPDT开
0.5 to 2.5 GHz SPDT Switch 500 MHz - 2500 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 0.8 dB INSERTION LOSS
Switches
The AWS5522 is a single pole, double throw (SPDT) RF switch developed to meet the stringent requirements of GSM and CDMA systems, ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| TQP4M4004 |
SP4T High Power 2.5V GSM Antenna Switch
|
TRIQUINT[TriQuint Semiconductor]
|
| MW4IC915MBR1 MW4IC915GMBR1 MW4IC915 |
MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM EDGE. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers MW4IC915MBR1MW4IC915GMBR1的GSM / GSM的EDGE网络 - CDMA技术。的W - CDMA860-960兆赫15日布什26最小输LDMOS的宽带集成功率放大器
|
飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
|
| MRF18085A MRF18085AR3 MRF18085ALSR3 |
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF18085A, MRF18085AR3, MRF18085ALSR3 GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
http://
MOTOROLA[Motorola, Inc]
|
| TQP4M4010 |
SP4T High Power GSM-EDGE Antenna Switch With Decoder
|
TRIQUINT[TriQuint Semiconductor]
|
| UPG2010TB UPG2010TB-E3 |
High power single control L-band SPDT switch.
NEC’s HIGH POWER SINGLE CONTROL L-BAND SPDT SWITCH
NECs HIGH POWER SINGLE CONTROL L-BAND SPDT SWITCH
|
NEC
ETC
California Eastern Laboratories
|
| MHVIC915R2 |
CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
|
Motorola
|
| GSA8821B301721 |
I-Bar Penta-band GSM Antenna Works with GSM / CDMA / PCS / DCS /UMTS/ WCDMA
|
List of Unclassifed Man...
|
| MASWSS0204V3 |
GaAs SPDT 2.7 V High Power Switch
|
M/A-COM Technology Solutions, Inc.
|
