| PART |
Description |
Maker |
| PTF10120 |
120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor 120瓦，1.8-2.0 GHz的GOLDMOS场效应晶体管
120 Watts, 1.8.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTF10112 |
60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor
60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor
60 Watts, 1.8.0 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
|
| PTF10122 |
50 Watts WCDMA, 2.1.2 GHz GOLDMOS Field Effect Transistor
50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor
50 Watts WCDMA 2.1-2.2 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF102027 |
40 Watts, 92560 MHz GOLDMOS Field Effect Transistor
40 WATTS, 925-960 MHZ GOLDMOS FIELD EFFECT TRANSISTOR
|
Ericsson Microelectronics
|
| PE8406 |
50 Ohm SMA Circulator Operating From 18 GHz to 26.5 GHz And 10 Watts With 17 dB Isolation
|
Pasternack Enterprises,...
|
| PTB20125 |
100 Watts, 1.8.0 GHz PCN/PCS Power Transistor
100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor 100瓦，1.8-2.0 GHz的PCN / PCS的功率晶体管
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTB20080 |
25 Watts, 1.6-1.7GHz RF Power Transistor
25 Watts, 1.6-1.7 GHz RF Power Transistor
25 Watts 1.6-1.7 GHz RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PH1214-25M |
Radar Pulsed Power Transistor - 25 Watts/ 1.20-1.40 GHz/ 150mS Pulse/ 10% Duty
Radar Pulsed Power Transistor - 25 Watts, 1.20-1.40 GHz, 150mS Pulse, 10% Duty 雷达脉冲功率晶体 25瓦特.20-1.40千兆赫，150毫秒脉冲0％的
|
Vishay Intertechnology, Inc.
MACOM[Tyco Electronics]
|
| PH1113-100 |
Radar Pulsed Power Transistor - 100 Watts/ 1.1-1.3 GHz/ 3ms Pulse/ 30% Duty
Radar Pulsed Power Transistor - 100 Watts, 1.1-1.3 GHz, 3ms Pulse, 30% Duty 雷达脉冲功率晶体 100瓦，11日至1月三日千兆赫，为3ms脉冲0％的关税
|
MACOM[Tyco Electronics]
|
