| PART |
Description |
Maker |
| IRKTF112 IRKLF112 2212 IRKTF112-08HNN IRKTF111-04H |
FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR 快速晶闸管/二极管和晶闸晶闸
INT-A-pak Power Modules(8V,112A,可控二极H结构INT-A-pak 功率模块) 相依甲柏功率模块V的，112A章，可控二极结构相依甲柏功率模块
INT-A-pak Power Modules(8V,112A,可控可控L结构INT-A-pak 功率模块)
INT-A-pak Power Modules(4V,112A,可控可控L结构INT-A-pak 功率模块)
Receptacle AA series 3 pin female PCB Vertical - no grd or latch
From old datasheet system
800V Doubler Circuit Positive Control Inverter Thyristor/Diode in a INT-A-Pak package
800V Doubler Circuit Negative Control Inverter Thyristor/Diode in a INT-A-Pak package
800V Doubler Circuit Positive Control Inverter Thyristor/Thyristor in a INT-A-Pak package
400V Doubler Circuit Positive Control Inverter Thyristor/Thyristor in a INT-A-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| STB80NF10 |
N - CHANNEL 100V - 0.014Ohm - 80A I 2 PAK/D 2 PAK LOW Qg STripFET POWER MOSFET
|
SGS Thomson Microelectronics
|
| SW1N60C |
N-channel D-PAK/I-PAK/TO-92 MOSFET
|
SAMWIN
|
| 160MT100KB 160MT120K 160MT120KB 160MT160KB 130MT80 |
THREE PHASE BRIDGE 三相桥式
800V 3 Phase Bridge in a INT-A-Pak package
1400V 3 Phase Bridge in a INT-A-Pak package
1000V 3 Phase Bridge in a INT-A-Pak package
1200V 3 Phase Bridge in a INT-A-Pak package
1600V 3 Phase Bridge in a INT-A-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| VSKJ270-08 VSKJ270-16 VSKE270-20 VSKC320-12 VSKJ32 |
DIODE 270 A, 800 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, MAGN-A-PAK-3, Rectifier Diode
DIODE 270 A, 1600 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, MAGN-A-PAK-3, Rectifier Diode
Standard Recovery Diodes, 250 A to 320 A (MAGN-A-PAK Power Modules)
DIODE 320 A, 1200 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, MAGN-A-PAK-3, Rectifier Diode
DIODE 250 A, 400 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, MAGN-A-PAK-3, Rectifier Diode
DIODE 250 A, 1200 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, MAGN-A-PAK-2, Rectifier Diode
DIODE 270 A, 1200 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, MAGN-A-PAK-3, Rectifier Diode
|
Vishay Semiconductors
Vishay Siliconix
|
| IRKLF200-04HK IRKHF200-04HK IRKLF200-08HK IRKLF200 |
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/可控硅L结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/二极H结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,8V,快速可控硅/可控L结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,8V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块00安培V的，快速可控硅/二极结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,12V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块00安培2V的，快速可控硅/二极结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/可控硅T结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块200安培4V电压，快速可控硅/可控结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,12V,快速可控硅/可控硅T结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块200安培2V的，快速可控硅/可控结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,8V,蹇?????纭?浜??绠∪缁??MAGN-A-pak???妯″?)
|
International Rectifier, Corp.
|
| 181NQ035 181NQ040 181NQ045 181NQ045R |
40V 180A Schottky Discrete Diode in a D-67 HALF-Pak package 40V的离180A肖特基二极管在D - 67半白
45V 180A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package
45V 180A Schottky Discrete Diode in a D-67 HALF-Pak package
35V 180A Schottky Discrete Diode in a D-67 HALF-Pak package
|
Cornell Dubilier Electronics, Inc.
International Rectifier
|
| 121NQ045 121NQ050 121NQ 121NQ035 121NQ040 121NQ045 |
45V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package
45V 120A Schottky Discrete Diode in a D-67 HALF-Pak package
40V 120A Schottky Discrete Diode in a D-67 HALF-Pak package
35V 120A Schottky Discrete Diode in a D-67 HALF-Pak package
SCHOTTKY RECTIFIER
|
IRF[International Rectifier]
|
| AM29F400B-75FC AM29F400B-75SC AM29F400B-75EC AM29F |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; Similar to IRFP064V with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFZ24N with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU120N with Lead Free Packaging
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1010EL with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF3710ZS with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRFZ46NL with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRF1010N with Lead-Free Packaging.
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU3709 with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7466 with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR3412 with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRL2505S with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU3911 with Lead Free Packaging
40V Single N-Channel Automotive HEXFET Power MOSFET in a TO-220AB package; Similar to IRF4104 with Lead Free Packaging x8/x16闪存EEPROM
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRLR3303 with Lead Free Packaging x8/x16闪存EEPROM
x8/x16 Flash EEPROM x8/x16闪存EEPROM
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRLZ24N with Standard Packaging x8/x16闪存EEPROM
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRLR7821 with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF3707ZCL with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRL8113L with Lead Free Packaging
40V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7484 with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU3910 with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU3910 with Lead Free Packaging
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRLR2908 with Lead Free Packaging
|
Rochester Electronics, LLC
Amphenol, Corp.
Advanced Micro Devices, Inc.
|
| E142-SERIES M342-SERIES T242-SERIES X242-SERIES E2 |
Transient Voltage Suppressor Diodes
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR3910 with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7862PBF with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRL2203NS with Standard Packaging
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB260N with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF9410 with Standard Packaging
250V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU12N25D with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRLR4343 with Standard Packaging
Peripheral IC 外围芯片
|
Bourns, Inc.
Hoffman
TOKO, Inc.
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