PART |
Description |
Maker |
27C512A 27C512A-12EVS 11173E 27C512A-12ISO 27C512A |
512K (64K x 8) CMOS EPROM 12k4K的8)的CMOS存储 From old datasheet system 512K (64Kx8) CMOS EPROM
|
Microchip Technology, Inc. Microchip Technology Inc. MICROCHIP[Microchip Technology]
|
FM27C512Q FM27C512N90 FM27C512V120 FM27C512V150 FM |
512K-Bit (64K x 8) High Performance CMOS EPROM 524,288-Bit (64K x 8) High Performance CMOS EPROM 524/288-Bit (64K x 8) High Performance CMOS EPROM Capacitors.. 100 PIECE MIN.. NC/NR
|
FAIRCHILD[Fairchild Semiconductor] PROM
|
MX27C4096PC-10 MX27C4096PC-12 MX27C4096PC-15 MX27C |
4M-BIT [512K x 8/256K x 16] CMOS EPROM
|
Macronix International
|
MX27C4111PC-90 27C4111-10 27C4111-12 27C4111-15 27 |
4M-BIT [512K x8/256K x16] CMOS EPROM WITH PAGE MODE
|
MCNIX[Macronix International]
|
27L512-20 27L512-25 27L512-12 |
512K-BIT [64K x 8] CMOS EPROM 12k位[64K的8]的CMOS存储
|
Macronix International Co., Ltd.
|
27L4000-25 27L4000-20 |
4M-BIT [512K x8] LOW VOLTAGE OPERATION CMOS EPROM 4分位[12k x8]低电压工作的CMOS存储
|
Macronix International Co., Ltd.
|
AT27BV040 AT27BV040-12VI AT27BV040-12JI AT27BV040- |
120NS, VSOP, IND TEMP(EPROM) 512K X 8 OTPROM, 120 ns, PDSO32 4-Megabit (512K x 8) Unregulated Battery-Voltage High-Speed OTP EPROM
|
Atmel, Corp. ATMEL Corporation
|
NM27C020 NM27C020QE150 |
2 Meg (256k x 8) UV Erasable CMOS EPROM [Life-time buy] 2097152-Bit (256K x 8) UV Erasable CMOS EPROM 2,097,152-Bit (256K x 8) UV Erasable CMOS EPROM 2 /097 /152-Bit (256K x 8) UV Erasable CMOS EPROM
|
FAIRCHILD[Fairchild Semiconductor]
|
TC55W800FT-70 |
512K Word x 16 Bit/1M Word x 8 Bit Full CMOS Static RAM(512K x 16 1M x 8 CMOS 静态RAM) 12k字16 Bit/1M字8位全部的CMOS静态RAM(为512k字16 100万字× 8位的CMOS静态RAM)的
|
Toshiba Corporation Toshiba, Corp.
|
AT27C512RNBSP AT27C512R AT27C512R-70JA AT27C512R-1 |
x16 EPROM x16存储 x8 EPROM From old datasheet system 512K EPROM
|
Atmel, Corp. Atmel Corp
|
MB811171622A-125 |
CMOS 2×512K×16 Bit
Synchronous Dynamic RAM(CMOS 2×512K×16 位同步动态RAM)
|
Fujitsu Limited
|