| PART |
Description |
Maker |
| HN27C4000G |
524288-Word x 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM
|
Hitachi Semiconductor
|
| MSM512800C |
262144-Word X 8-Bit DYNAMIC RAM
|
OKI electronic componets
|
| GM71C4256 |
262144 word x 4 Bit CMOS DRAM
|
GoldStar
|
| M5M5Y416CWG-85HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5Y416CWG-70HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M44258-10 M5M44258-7 M5M44258-8 M5M44258BP M5M44 |
STATIC COLUMN MODE 1048576-BIT (262144-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Semiconductor
|
| M5M5V416CWG-55HI M5M5V416CWG-70HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
Memory>Low Power SRAM
|
http://
RENESAS[Renesas Electronics Corporation]
|
| M5M44260CJ-7 |
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM 快速页面模194304位（262144字由16位）动态随机存储器
|
Mitsubishi Electric, Corp.
|
| M5M5256DP-45LL M5M5256DP-45XL M5M5256DP-55LL M5M52 |
262144-BIT CMOS STATIC RAM
Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-PDIP -40 to 85 262144位（32768 - Word位）的CMOS静态RAM
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word位）的CMOS静态RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| HM624256AJP-25 |
262144-word x 4-bit High Speed CMOS Static RAM
|
Renesas Technology / Hitachi Semiconductor
|
