PART |
Description |
Maker |
MTM8N60 MTH8N60 MTH8N55 |
(MTH8N55 / MTH8N60) Power Field Effect Transistor Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC MOTOROLA[Motorola, Inc] Motorola Semiconductor Motorola, Inc.
|
PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫 LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET 125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor 125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB Ericsson Microelectronics
|
IRFF130 IRFF131 IRFF132 IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
|
General Electric Solid State GE Solid State
|
MTM15N20 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
MTD1N40 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|
ATC100B330JT500XT ATC200B203KT50XT CDR33BX104AKYS |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRF19125 MRF19125R3 MRF19125SR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
MRF8S7120NR3 |
RF Power Field Effect Transistor
|
Motorola
|
MRF141 |
RF FIELD-EFFECT POWER TRANSISTOR
|
Advanced Semiconductor
|
MRF19085 MRF19085LR3 MRF19085LSR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|