| PART |
Description |
Maker |
| AT-32063 AT-32063-BLK AT-32063-TR1 |
Low Current, High Performance NPN Silicon Bipolar Transistor
Low Current High Performance NPN Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| BFP183R |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| MSA-3111 MSA-3111-TR1 MSA-3135 MSA-3185 MSA-3186 M |
0 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
(MSA-31xx) Cascadable Silicon Bipolar MMIC Amplifier
Silicon Bipolar RFIC Amplifiers 硅双极射频放大器
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| BFP420F |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain amplifiers in NEW thin small flatlead package TSFP-4
|
INFINEON[Infineon Technologies AG]
|
| BFS483 |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFR183W) for low noise, high gain broadband amplifiers
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BFP620FE7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in flatlead package TSFP-4
|
Infineon
|
| 2SC6043 |
Bipolar Transistor, 50V, 2A, Low VCE(sat) NPN Single MP
NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| GT15M321 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| AT-41410 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
| BFP760 BFP760-15 |
Low Noise Silicon Germanium Bipolar RF Transistor
|
Infineon Technologies A...
|
