PART |
Description |
Maker |
MMDF5N02Z |
DUAL TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
MMDF3N02HD ON2178 |
From old datasheet system DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS
|
MOTOROLA[Motorola, Inc]
|
MMDF6N03HD MMDF6N03HD_D ON2199 ON2198 |
DUAL TMOS POWER MOSFET 30 VOLTS Medium Power Surface Mount Products From old datasheet system
|
Motorola, Inc ON Semi
|
MMDF7N02Z MMDF7N02Z_D ON2201 ON2200 |
DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS Medium Power Surface Mount Products From old datasheet system
|
Motorola, Inc ON Semi
|
MTDF1N03HD ON2524 ON2523 |
DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM From old datasheet system
|
MOTOROLA[Motorola, Inc]
|
MTDF1P02HD ON2526 ON2525 |
DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM From old datasheet system
|
Motorola, Inc
|
MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培,功率场效应晶体000伏特的RDS(on)\u003d 0.80欧姆 TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA From old datasheet system TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM TMOS POWER FET 12 AMPERES 60 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MMFT5P03HD ON2230 MMFT5P03HDT3 ON2229 |
TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS From old datasheet system TMOS P-CHANNEL FIELD FEECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
MMFT3055ET1 MMFT3055ET3 |
N-Channel TMOS E-FET Power MOSFET
|
ON Semiconductor
|
MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G |
TMOS Power FET TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount
|
ONSEMI[ON Semiconductor]
|