| PART |
Description |
Maker |
| MIE-324A2 |
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-304A4 |
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-524A4 |
AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-406A4U |
AlGaAs/GaAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| SHF-0186 |
DC-12 GHz, 0.5 Watt AlGaAs/GaAs HFET 的DC - 12千兆赫，0.5瓦的AlGaAs /砷化镓异质结场效应晶体管
DC-12 GHz 0.5 Watt AlGaAs/GaAs HFET
|
Electronic Theatre Controls, Inc.
ETC[ETC]
Stanford Microdevices
|
| MIE-324A4 324A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| ASDL-4772-C41 ASDL-4772-C22 |
1.6 mm, 1 ELEMENT, INFRARED LED, 940 nm
High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
|
Lite-On Technology, Corp.
AVAGO TECHNOLOGIES LIMITED
|
| HSDL-4261 |
High-Power T-1篓煤 (5mm) AlGaAs Infrared (870nm) Lamp
High-Power T-1? (5mm) AlGaAs Infrared (870nm) Lamp
|
AVAGO TECHNOLOGIES LIMITED
|
| BD-E54DRD |
super red chips, which are made from AlGaAs on GaAs substrate
|
BRIGHT LED ELECTRONICS CORP
|
