| PART |
Description |
Maker |
| MIE-406A4U |
AlGaAs/GaAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-144A4 |
AlGaAs/GaAs High POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-324A4 324A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| ASDL-4772-C41 ASDL-4772-C22 |
1.6 mm, 1 ELEMENT, INFRARED LED, 940 nm
High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
|
Lite-On Technology, Corp.
AVAGO TECHNOLOGIES LIMITED
|
| L532 |
IGBT phaseleg in ISOPLUS i4-PAC IGBTphaseleg在ISOPLUS i4 - PAC
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| BL-B6174 |
Chip material: AlGaAs/GaAs
|
BRIGHT LED ELECTRONICS CORP
|
| HSDL-4260 |
High-Power T-1篓煤 (5mm) AlGaAs Infrared (875nm) Lamp
High-Power T-1? (5mm) AlGaAs Infrared (875nm) Lamp
|
Lite-On Technology Corporation
|
| MIE-536A2U MIE-526A4U |
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| BD-C406ND |
red chips, which are made from AlGaAs on GaAs substrate
|
BRIGHT LED ELECTRONICS CORP
|
| BD-A546RD |
super red chips, which are made from AlGaAs on GaAs substrate
|
BRIGHT LED ELECTRONICS CORP
|
| BA-4D7UW-A |
super red chips which are made from AlGaAs on GaAs substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BD-E326RD |
super red chips, which are made from AlGaAs on GaAs substrate
|
BRIGHT LED ELECTRONICS CORP
|
