PART |
Description |
Maker |
DC342A DC342A-15 |
SCH LTC1911 LOW NOISE CONSTANT FREQUENCY STEP DOWN CHARGE PUMP PCB
|
Linear Technology
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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DC812A DC812A-15 |
SCH LTC2606CDD 16 BIT RAIL TO RAIL VOUT DAC I2C INTERFACE
|
Linear Technology
|
BFN36 BFN38 Q62702-F1303 Q62702-F1246 |
From old datasheet system NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
APT5014BLL APT5014SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗,高电压,N沟道增强模式的新一代功率MOSFET Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS 7 500V 35A 0.140 Ohm
|
Advanced Power Technology, Ltd.
|
2SC3950 |
RTS Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 15V; Power: 2W; Assembly; High Power Density; Optional Continuous Short Circuit Protected; Efficiency to 85% High-Definition CRT Display Video Output Driver Applications
|
Sanyo Electric Co.,Ltd. Sanyo Semicon Device
|
HD1760JL |
High Voltage NPN Power Transistor for High Definition and New Super-Slim CRT Display High Voltage NPN Power Transistor For High Definition CRT Displays
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics, Inc.
|
M100K |
High Voltage Power Rectifiers / High Voltage Rectifier Diodes
|
Facon Semiconductor
|
BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve... From old datasheet system NPN Silicon Transistors with High Reverse Voltage Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% NPN Silicon RF Transisrors NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管(高耐压l低集电极发射极饱和电压)
|
SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
2N6031 2N5631 2N5631-D |
POWER TRANSISTORS COMPLEMENTARY SILICON High-Voltage - High Power Transistors High-Voltage High-Power Transistors
|
ONSEMI[ON Semiconductor]
|
EMC21L1004 EMC21L1004GN |
High Voltage - High Power GaN-HEMT Power Amplifier Module
|
EUDYNA[Eudyna Devices Inc]
|
MCP152505 MCP1541 MCP1525 MCP1525-I/P MCP1525-I/TO |
2.5V and 4.096V Voltage References MCP1525 is a low power, high precision voltage reference. It provides a precise output voltage of 2.5V which is then compared to ... MCP1541 is a low power, high precision voltage reference. It provides a precise output voltage of 4.096V which is then compared to ...
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MICROCHIP[Microchip Technology]
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