| PART |
Description |
Maker |
| SRI51211 SRI512 SRI512-SBN18/1GE |
512-bit ISO14443-B contactless memory with 2 binary counters, 5 OTP blocks and anti-collision
13.56 MHz short-range contactless memory chip with 512-bit EEPROM and anticollision functions
|
ST Microelectronics
STMicroelectronics
|
| LC587202A LC587204A LC587206A LC587208A |
4-bit Single-chip Microcontrollers LCD driver ROM: 2, 4, 6, or 8 K x 16 bits, RAM: 512 x 4 bits
4-Bit Single-Chip Microcontroller LCD Driver ROM:2 /4 /6 /or8 K x 16 bits / RAM:512 x4 bits
4-Bit Single-Chip Microcontroller LCD Driver ROM:246or8 K x 16 bits RAM:512 x4 bits
CMOS IC
4-Bit Single-Chip Microcontroller LCD Driver ROM:2,4,6,or8 K x 16 bits, RAM:512 x4 bits
Single-Chip 4-Bit Microcontroller with LCD Driver,512 ×4bit RAM,4K× 16 Bit ROM on chip(单片4位微控制器（带LCD驱动器，512 ×4位RAMK× 16位ROM
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| AM29LL800BB-150EC AM29LL800BB-150FIB AM29LL800BB-1 |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 1M X 8 FLASH 2.2V PROM, 200 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 1M X 8 FLASH 2.2V PROM, 200 ns, PDSO48
Quadruple Bus Buffer Gates With 3-State Outputs 14-SSOP -40 to 85 1M X 8 FLASH 2.2V PROM, 150 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 8兆位1 M中的x 8-Bit/512亩x 16位）.2伏的CMOS只引导扇区闪
|
Advanced Micro Devices, Inc.
|
| HM62W8512BLFP-5 HM62W8512BLFP-5SL HM62W8512BLFP-5U |
512K X 8 STANDARD SRAM, 55 ns, PDSO32
4 M SRAM (512-kword ? 8-bit)
4 M SRAM (512-kword 垄楼 8-bit)
4 M SRAM (512-kword ′ 8-bit)
|
Renesas Electronics Corporation
|
| AM41DL3208GB70I AM41DL3208GB85I AM41DL3208GT30IT A |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
SPANSION
|
| HM658512AI |
4 M PSRAM (512-kword ×8-bit)(4 M PSRAM (512k×8) 4个M移动存储芯片12 KWord的8位）个M移动存储芯片（为512k字8位）
4 M PSRAM (512-kword ?8-bit)(4 M PSRAM (512k瀛??8浣?)
|
Hitachi,Ltd.
|
| AM29F400BB-55FEB AM29F400BB-55FIB AM29F400BT-55FCB |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
|
Advanced Micro Devices, Inc.
http://
|
| M41ST84W M41ST84WMH M41ST84WMH1 M41ST84WMH1TR M41S |
5.0 or 3.0V / 512 bit 64 x 8 SERIAL RTC with SUPERVISORY FUNCTIONS
5.0 or 3.0V, 512 bit 64 x 8 SERIAL RTC with SUPERVISORY FUNCTIONS
8 WIRE INLINE COUPLER CROSS-PI 5.0.0V124 × 8串行实时时钟与监督职
SPEAKER BINDING POSTS, GOLD 2 PACK (BLCK & RED) 5.0.0V5124 × 8串行实时时钟与监督职
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| AM29LV400B AM29LV400BB120EC AM29LV400BB120ECB AM29 |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
FEEDTHRU CAPACITOR, 47PF 3A 100VFEEDTHRU CAPACITOR, 47PF 3A 100V; Capacitance:0.047nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp, op.
Ceramic Multilayer Capacitor; Capacitance:470pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes
Am29LV400B KGD (Known Good Die Supplement)
INNOLINE: High Voltage Input Series - For Telecom DSM, XDSL, Aplication- Internal Pi Filter- Multi-Outputs- Overcurrent Protection- High Efficiency to 80% 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12x 8-Bit/256x 16位）.0伏的CMOS只引导扇区闪
CAP CERM 2.2UF 4V X7R 0612 20% 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO48
|
http://
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
Electronic Theatre Controls, Inc.
|
| LPC2378FBD144 |
Single-chip 16-bit/32-bit microcontrollers; 512 kB flash with ISP/IAP, Ethernet, USB 2.0, CAN, and 10-bit ADC/DAC
|
NXP Semiconductors
|
| LPC2377 LPC2377FBD144 LPC2378 LPC2378FBD144 |
Single-chip 16-bit/32-bit microcontroller; 512 kB flash with ISP/IAP, Ethernet, USB 2.0, CAN, and 10-bit ADC/DAC
|
NXP Semiconductors
|
| AM29F400BT-90EC0 AM29F400BT-90SC0 AM29F400BT-90EK |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
|
Advanced Micro Devices, Inc.
|
